Thermal Transport across SiC-Water Interfaces

CU Gonzalez-Valle and S Kumar and B Ramos-Alvarado, ACS APPLIED MATERIALS & INTERFACES, 10, 29179-29186 (2018).

DOI: 10.1021/acsami.8b10307

Thermal transport across interfaces made of 3C-type silicon carbide (SiC) and water was investigated by means of nonequilibrium classical molecular dynamics. The effects of different crystallographic planes and atomic surface terminations were studied, as it pertains to interfacial heat transfer. Hydrophilic and hydrophobic conditions were analyzed by modifying the interfacial bonding strength between the solid and liquid phases. The formation of structures in the liquid molecules close to the solid substrate was observed and found that such structures are sensitive to the uppermost atomic layer termination, the wettability condition, and the temperature of the system. It was found that the interfacial heat transfer and the wetting properties are not universally related and to obtain a more comprehensive description, it is required to include the structuring observed in the liquid phase at the interface. A reconciliation of the thermal boundary conductance calculations was found after the density depletion length was utilized as the descripting parameter.

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