Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon

SL Zhang and YH Huang and G Tetiker and S Sriraman and A Paterson and R Faller, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 21, 5898-5902 (2019).

DOI: 10.1039/c9cp00125e

The atomic layer etching of chlorinated germanium surfaces under argon bombardment was simulated using molecular dynamics with a newly fitted Tersoff potential. The chlorination energy determines the threshold energy for etching and the number of etched atoms in the bombardment phase. Etch rate is determined by bombardment energy.

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