Investigation of tool geometry in nanoscale cutting single-crystal copper by molecular dynamics simulation
HF Dai and H Du and JB Chen and GY Chen, PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART J-JOURNAL OF ENGINEERING TRIBOLOGY, 233, 1208-1220 (2019).
DOI: 10.1177/1350650119826448
Molecular dynamics has been employed in this paper to investigate the nanoscale cutting process of single-crystal copper with a diamond tool. The behavior of the workpiece during material removal by diamond cutting has been studied. The effects of tool geometry including rake angle, clearance angle, and edge radius are thoroughly investigated in terms of chips, dislocation movement, temperature distribution, cutting temperature, cutting force, and friction coefficient. The investigation showed that an appropriate positive rake angle (30 circle), a suitable clearance angle (10 circle), or a smaller edge radius tip resulted in a smaller cutting force and a better subsurface finish. It was found that a tool with a rake angle of 30 circle generated more chips, had a higher cutting efficiency, and produced a lower temperature in the workpiece, but a smaller rake angle tip was more conducive to protecting the groove compared to a large rake angle tip. Compared with a tool with a small clearance angle, the tool with a larger clearance angle generated more chips and caused a lower temperature rise in the copper workpiece, and prolonged its lifetime. In addition, a larger clearance angle tip was more conducive to protecting the groove. A smaller edge radius tip reduces the cutting heat during the nanoscale cutting process, while the volume of chips decreases. These results indicated that it is possible to control and adjust the tool parameters according to the tool rake angle, clearance angle, and edge radius during the machining of single- crystal copper, and a set of tool parameters were obtained: 30 circle rake angle, 10 circle clearance angle, and 0 nm edge radius which could reduce surface damage and the required cutting force.
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