The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope

ND Prasolov and IA Ermakov and AA Gutkin and VA Solov'ev and LM Dorogin and SG Konnikov and PN Brunkov, SEMICONDUCTORS, 53, 2110-2114 (2019).

DOI: 10.1134/S1063782619120224

It was shown that the nanoindentation treatment of the atomically flat GaAs surface with the tip of atomic-force microscope in contact mode allows to produce small size pits with the depth in the range from a few tenths of nm up to a 1.5 nm. The experimental data can be qualitatively described on the base of kinetic concept of fracture of solid state developed by Zhurkov, which suppose the generation of defects and subsequent destruction of the GaAs surface. The molecular dynamics modelling confirmed thermally activated destruction of a few top atomic layers under indentation. The presented technology could be used to form the shape of solid state surfaces with subnanometer resolution in depth without wet etching processes.

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