Peculiarities of grain boundary migration in vanadium crystal under shear loading

DS Kryzhevich and KP Zolnikov and AV Korchuganov, XXXIII INTERNATIONAL CONFERENCE ON EQUATIONS OF STATE FOR MATTER, 1147, 012032 (2019).

DOI: 10.1088/1742-6596/1147/1/012032

The atomic mechanisms of migration of the symmetric tilt grain boundaries in V crystallites under shear loading are studied. The calculations were carried out on the basis of molecular-dynamics method using many-body potentials of interatomic interaction. It is shown that the migration rate of the grain boundaries depends on the misorientation angle and the rate of shear loading. The movement of the grain boundaries has jump-like character, due to jump-like growth and decrease of stresses initiated by shear loading. It is revealed that migration of grain boundaries is realized by a certain sequence of rearrangement of grain atomic planes adjacent to the grain boundary. These planes are by turns rearranged into the structure of the atomic planes of the grain boundary until they are adjusted to the lattice of another grain.

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