Orientation Relationships of Pure Tin on Single Crystal Germanium Substrates

TC Reeve and ST Reeve and CA Handwerker, JOURNAL OF ELECTRONIC MATERIALS, 49, 140-151 (2020).

DOI: 10.1007/s11664-019-07640-6

The limited number of independent beta-Sn grain orientations resulting from the difficulty in nucleating beta-Sn during solidification of Sn- based solders has a large effect on the resulting beta-Sn grain size and, hence, on overall solder joint performance and reliability. This study analyzes the efficacy of Ge as a heterogeneous nucleation agent for beta-Sn by observing the morphologies and orientation relationships of as-deposited, solid-state annealed, and liquid-state annealed pure Sn films on single crystal Ge (100), (110), and (111) substrates. Results from scanning electron microscopy and electron backscatter diffraction showed that the as-deposited Sn films all deposited with a Sn (001)|| z-axis texture, regardless of the underlying Ge substrate orientation. Solid-state annealing at 150 degrees C for 5 min did not result in significant dewetting of the Sn films, and the films maintained their as-deposited texture of Sn (001)|| z-axis, regardless of the underlying Ge substrate orientation. Liquid-state annealing at 235 degrees C for 1 min resulted is large-scale dewetting of the Sn films and re-orientation of the Sn films on the various Ge substrates. After solidification, the Ge (100) and (110) single crystal substrates produced patches of dewetted grains of the same orientation but there were no consistent Sn grain textures after liquid-state annealing, suggesting no single orientation relationship. In contrast, solidification on Ge (111) single crystal substrates resulted in isolated grains with a single Sn film texture and an orientation relationship of. Density Functional Theory simulations of the experimentally observed Ge (111) sample orientation relationship and the Ge/Sn cube-on-cube orientation relationship suggest favorable relative interfacial binding energies for both interface orientations.

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