Effects of pressure and slurry on removal mechanism during the chemical mechanical polishing of quartz glass using ReaxFF MD

XG Guo and S Yuan and JX Huang and C Chen and RK Kang and ZJ Jin and DM Guo, APPLIED SURFACE SCIENCE, 505, 144610 (2020).

DOI: 10.1016/j.apsusc.2019.144610

Reactive force field molecular dynamics (ReaxFF MD) simulation was employed to study the interfacial interaction during the Chemical mechanical polishing (CMP) process of quartz glass. Results indicated that dissociation and adsorption of H2O occurred on the quartz glass surface in pure H2O, and the dissociation of H2O could hydroxylate quartz glass surface to form Si-OH bonds. In addition, it was found that the surface hydroxylation degree is higher in aqueous H2O2. The formation of Si-O-Si bonds plays a key role in the CMP process. Dehydrogenation and dehydroxylation are two ways to form interface bridge bonds. The interface bridge bonds between abrasive and substrate could transmit mechanical force with the movement of abrasive. Interface pressure affects the number and forms of atoms removed. With the increment of pressure, the removal form gradually changes from single removal mode to chain removal mode. The effect of aqueous H2O2 on the removal process was also studied by adding different amount of OH group on the quartz glass surface. This work helps us reveal the removal mechanism in the CMP process of quartz glass from an atomic perspective.

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