Interaction of edge dislocation with copper atoms in an aluminum crystal

EV Fomin and VS Krasnikov, XXXIV INTERNATIONAL CONFERENCE ON INTERACTION OF INTENSE ENERGY FLUXES WITH MATTER, 1556, 012050 (2020).

DOI: 10.1088/1742-6596/1556/1/012050

In this work, the interaction of the moving edge dislocation with obstacles in form of copper atoms is studied using the molecular dynamics simulations. The samples are aluminum monocrystals of 52 x 60 x 15 nm(3) with axes oriented along directions (1) over bar 10, 111, 11 (2) over bar. The structure of copper solid solution is reproduced with following procedure: aluminum atoms are randomly selected and replaced by copper atoms. The concentration of copper atoms varies from 0.25% to 1%. The dislocation movement occurs under action of shear deformation. It is found that zones with a low concentration of copper atoms only slow down dislocation in an aluminum matrix, and the zones with a high local concentration of copper atoms not only produces stronger resistance to dislocation movement, but also they cause the change in the slip plane of the dislocation segment. When a significant part of a dislocation line moves to a neighboring slip plane, the complete transition of the dislocation to this slip plane can occur. It is also noted that such transitions of dislocation segments from one slip plane to another are accompanied by the formation of vacancies. Also the maximum value of the shear stress sigma(xy) is estimated-its value is approximately 250 MPa.

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