Mechanisms of Grain Growth in Nanocrystalline Cu under Tension

DS Kryzhevich and KP Zolnikov and AV Korchuganov, PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON PHYSICAL MESOMECHANICS. MATERIALS WITH MULTILEVEL HIERARCHICAL STRUCTURE AND INTELLIGENT MANUFACTURING TECHNOLOGY, 2310, 020170 (2020).

DOI: 10.1063/5.0034202

In the framework of the molecular dynamics approach, the features of the recrystallization of a nanocrystalline copper specimen under uniaxial tension were investigated. It was shown that the nucleation and development of plasticity in the specimen occurs as a result of the emission of partial dislocations from grain boundaries and triple junctions. Partial dislocations crossing grains form twins and stacking faults in their volume. The interaction of twins and stacking faults with grain boundaries can initiate the migration or disappearance of grain boundaries. As a result of these processes, stress-induced grain growth occurs in a nanocrystalline sample.

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