Effect of stable stacking fault energy and crystal orientation on fracture behaviour of thin metallic single crystals

R Singh and DK Mahajan, PHILOSOPHICAL MAGAZINE, 101, 929-963 (2021).

DOI: 10.1080/14786435.2021.1873448

Understanding the evolution of dislocations and twinning at the crack front is critical for designing micro-mechanical systems with improved performance. In this work, the dislocation evolution at the crack front in thin pre-cracked FCC single crystals is correlated with the associated fracture toughness, which is shown to be dependent on material specific properties such as stable stacking fault energy (gamma(ssf)) and crystal orientation using atomistic simulations. For materials with high gamma(ssf) value, sessile dislocations form at the crack front causing increased localised plastic flow stress that leads to low fracture toughness. Whereas the fracture process in materials with low gamma(ssf) value is governed by the motion of glissile dislocations and stress-induced twinning leads to high fracture toughness. For this case, twinning occurs at high stress levels followed by un-twinning due to stress relaxation at crack front by twinning. The crystal orientation influences the type of dislocations emitted (screw/edge) from the crack front which governs the mode of crack propagation. The Mode-III crack propagation by the emission of screw type dislocations causes significant decrease in the fracture toughness compared to Mode I crack propagation which is caused by simultaneous emission of edge type dislocations on the two symmetrically inclined slip planes at the crack front. For certain pre-cracked crystal orientations, twinning is seen during the early stages of plastic deformation in materials with high gamma(ssf) value. However, un- twinning is not observed in crystal orientation-based twinning at the crack front.

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