Using irradiation-induced defects as pinning sites to minimize self- alignment in twisted bilayer graphene

D Chen and L Shao, APPLIED PHYSICS LETTERS, 118, 151602 (2021).

DOI: 10.1063/5.0039703

Preparing bi-layer graphene under a magic twisting angle of similar to 1.1 degrees has been challenging due to its strong tendency for self- alignment. We propose a method to pin graphene layers and minimize their self-rotation when positioned close to each other. The feasibility is demonstrated by the present study using molecular dynamics simulations. C-60 clusters are used to bombard two individual graphene layers, creating damage on both layers. When two irradiated layers are moving closer to each other, defects from irradiation damaged zones can interact with each other, hence acting as pinning sites to immobilize graphene and minimize rotation or gliding. Dangling bonds from defective regions of each plane induce the formation of sp bonds. Upon sliding, the bond is strong enough to induce the formation of one-dimensional carbon single chain, acting as a thread to constrain the relative movements.

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