Effects of initial temperature on the damage of GaN during nanogrinding
CY Zhang and XG Guo and S Yuan and ZG Dong and RK Kang, APPLIED SURFACE SCIENCE, 556, 149771 (2021).
Molecular dynamics (MD) were utilized to explore the damage of gallium nitride (GaN) in nanogrinding at a wide range of initial temperature (100-1000 K). The focus is on the relationship between the initial temperature and the lattice structure, dislocation, phase transformation, average coefficient of friction (COF) and mechanical properties of subsurface damage (SSD) layer. The results manifest that the dislocation density, number of sphalerite atoms, ultimate tensile strength (UTS) and average COF show a positive correlation with the initial temperature. Among them, when the initial temperature rises to 1000 K, the dislocation density is three times that at 100 K. As well as the UTS enhances 26.8% indicated the decreasing in brittleness of GaN. However, the average COF also adds from 0.37 to 0.76 reduced the machining accuracy. This work enriches the theoretical understanding about the impacts of initial temperature on the damage of GaN during nanogrinding from the atomistic scale and provides technological references for low-damage processing of GaN.
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