Effect of misfit strain on the buckling of graphene/MoS2 van der Waals heterostructures
RS Zhang and JW Jiang, NANOTECHNOLOGY, 32, 485701 (2021).
Van der Waals heterostructures inherit many novel electronic and optical properties from their constituent atomic layers. Mechanical stability is key for realizing high-performance nanodevices based on van der Waals heterostructures. However, buckling instability is a critical mechanical issue for heterostructures associated with its two-dimensional nature. Using molecular dynamics simulations of graphene/MoS2 heterostructures, we demonstrate the relationship between buckling instability and the misfit strain that arises inevitably in such heterostructures. The impact of misfit strain on buckling depends on its magnitude: (1) A negative misfit strain causes a pre-compression of the graphene layer, which in turn initiates and accelerates buckling in this layer and reduces the buckling stability in the heterostructure as a whole. (2) A small positive misfit strain enhances the buckling stability of the graphene/MoS2 heterostructure by pre-stretching and hence decelerating the buckling of the graphene layer (where heterostructure buckling is initiated). (3) In the case of a large positive misfit strain, the graphene layer is pre-stretched while the MoS2 layer is significantly pre-compressed, so that heterostructure buckling is initiated by the MoS2 layer. Consequently, the buckling stability of the graphene/MoS2 heterostructure is reduced by increasing the large positive misfit strain. These findings are valuable for understanding the mechanical properties of van der Waals heterostructures.
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