Effect of anion and cation vacancies pairs in conduct of the Ba(1-3x)TiO3(1-x) and BaTi(1-3x2)O3(1-x) (x = 0.0033) as a memristor

N Ertekin and S Rezaee, MATERIALS TODAY COMMUNICATIONS, 31, 103333 (2022).

DOI: 10.1016/j.mtcomm.2022.103333

As a memristor with a memory effect, barium titanate (BT) is an excellent choice for designing a memory circuit. Vacancies control the memory effect, performance, and operating temperature of the BT memristor. However, different anion and cation vacancies pairs as Schottky type defects have diverse effects on memristor conducts. In this research, the influence of oxygen and barium vacancies in Ba(1-3x)TiO3(1-x) as well as oxygen and titanium vacancies in BaTi((1-3x/2))O3((1-x)) (x = 0.0033) on memristor manner have been investigated by molecular dynamics (MD) simulation. The obtained results indicate the type of pairs vacancies dramatically influence the diffusion of ions, response to DC voltage, and hysteresis loop area. The barium vacancies trapped fewer oxygen vacancies than titanium vacancies. So, Ba(1-3x)TiO3(1-x) has more oxygen diffusion ions, better electrical current, and more hysteresis loop area than BaTi(1-3x/2)O3(1-x). Therefore, Ba(1-3x)TiO3(1-x) is an appropriate choice for memristor. Memristor manufacturing companies can use the obtained result from this paper to design memristors with more efficiency and low operation temperature.

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