Influence of Creep Conditions and Grain Size on the Creep Behavior of Nano-Twinned Silicon Carbide Polycrystal: A Molecular Dynamics Study

S Gowthaman and T Jagadeesha and V Dhinakaran, SILICON, 14, 11381-11394 (2022).

DOI: 10.1007/s12633-022-01873-7

The existence of a planar defects on any ceramic material has invoke greater modifications in the material features of many intermetallic and alloying compounds, owed to its greater impact over the material behavior. In this study, the compressive creep behavior of nano-twinned silicon carbide under various grain size such as (3.68 nm, 4.37 nm and 5.4 nm) and creep circumstances such as applied pressure (10 GPa, 12.5 GPa and 15 GPa) and temperature (1000 K, 1250 K and 1500 K) has been analysed through molecular dynamics method. Through the following study, it is originated that the temperature offers bigger impact over the creep behavior trailed by the pressure (applied) and grain size, owed to the establishment of greater diffusion and vacancy formation behavior amid the atoms. Further the radial distribution function analysis has confirmed that the increment in temperature offers greater increment in the diffusion behavior of silicon and carbon atoms which primes to impact the creep life.

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