Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi- scale modeling framework

PL Julliard and A Johnsson and N Zographos and R Demoulin and R Monflier and A Jay and O Er-Riyahi and F Monsieur and S Joblot and F Deprat and D Rideau and P Pichler and A Hémeryck and F Cristiano, SOLID-STATE ELECTRONICS, 200, 108521 (2023).

DOI: 10.1016/j.sse.2022.108521

Extended defects formed as a result of heated implantation and thermal annealing are studied using transmission electron microscopy and kinetic Monte Carlo simulations. We highlight the relevance of using kinetic Monte Carlo approach to provide information to continuum-scale simulations as well as the value of integrating data from atomic-scale calculations for its calibration.

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