Lithium-Doped Barium Titanate as Advanced Cells of ReRAMs Technology

N Ertekin and S Rezaee, JOURNAL OF ELECTRONIC MATERIALS, 52, 1575-1589 (2023).

DOI: 10.1007/s11664-022-10124-9

Resistive random-access memory (ReRAM) consists of memristor cells which are the ideal alternative to embedded flash memory technology. The development of ReRAMs is dependent on the optimization of the memristor cells. In this research, lithium-doped barium titanate (Ba0.98Li0.02TiO2.99) as a memristor cell has been investigated via molecular dynamics simulation. The memristor characteristics of Ba0.98Li0.02TiO2.99, such as oxygen vacancies migration, the response under the DC and AC voltages, the hysteresis loop (I-V graph), and the resistance-voltage diagram (R-V graph) have been probed. The results indicate that the doped lithium ions lead to the free migration of oxygen vacancies, prevent the formation of cluster vacancies, and provide acceptable 0.54- and 0.46-eV diffusion and conductivity energy barriers, respectively, for oxygen ions. These energy barriers can decrease switching time, which helps develop memristor-based neuromorphic processors with fast switching times. The temperature in the range of 700-1600 K, and DC and AC voltages cannot cause the migration of the barium, titanium, and lithium ions. This causes only oxygen ions and their vacancies to perform the SET/RESET operations. The test of AC voltage bias indicates that the hysteresis loop area of Ba0.98Li0.02TiO2.99 is 5.8 times more than TiO(2-x). The R-V graph shows the clear SET/RESET operations by oxygen ions and their vacancies. The obtained results indicate the good potential of Ba0.98Li0.02TiO2.99 as a advanced memristor cell, and shows that it can be exploited as non- volatile resistance-switching memory and may increase the performance of ReRAMs. GRAPHICS .

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