Effects of suboxide layers on the electronic properties of Si(100)/SiO2 interfaces: Atomistic multi-scale approach

BH Kim and G Kim and K Park and M Shin and YC Chung and KR Lee, JOURNAL OF APPLIED PHYSICS, 113, 073705 (2013).

DOI: 10.1063/1.4791706

A multi-scale approach connecting the atomistic process simulations to the device-level simulations has been applied to the Si(100)/SiO2 interface system. The oxidation of Si(100) surface was simulated by the atomic level molecular dynamics, the electronic structure of the resultant Si/suboxide/SiO2 interface was then obtained by the first- principles calculations, and finally, the leakage currents through the SiO2 gate dielectric were evaluated, with the obtained interface model, by the non-equilibrium Green's function method. We have found that the suboxide layers play a significant role for the electronic properties of the interface system and hence the leakage currents through the gate dielectric. (C) 2013 American Institute of Physics. http://dx.doi.org/10.1063/1.4791706

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