Effect of morphology on the phonon thermal conductivity in Si/Ge superlattice nanowires

II Khaliava and AL Khamets and IV Safronov and AB Filonov and T Suemasu and DB Migas, JAPANESE JOURNAL OF APPLIED PHYSICS, 62, SD1013 (2023).

DOI: 10.35848/1347-4065/aca912

We used nonequilibrium molecular dynamics to investigate the role of morphology in the phonon thermal conductivity of 100, 110, 111 and 112-oriented Si/Ge superlattice nanowires at 300 K. Such nanowires with 112 growth direction were found to possess the lowest values of the thermal conductivity 1.6 W/(m center dot K) for a Si and Ge segment thickness of similar to 3 nm due to the lowest average group velocity and highly effective 113 facets and Si/Ge(112) interface for phonon- surface and phonon-interface scattering, respectively. Comparison with homogeneous and core/shell Si and Ge nanowires showed that the superlattice morphology is the most efficient to suppress the thermal conductivity.

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