Early Stage Growth Process of Dinaphtho2,3-b:2',3'-fthieno3,2-bthiophene (DNTT) Thin Film

N Hiroshiba and Y Kawano and R Ongko and R Matsubara and A Kubono and H Kojima and K Koike, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 220 (2023).

DOI: 10.1002/pssa.202300252

The early stage growth of dinaphtho2,3-b:2',3'-fthieno3,2-bthiophenes (DNTTs) thin films are investigated using grazing incidence X-ray diffraction (GIXD) and surface morphology analysis using atomic force microscopy (AFM). The thin-film growth conditions are controlled using a slow deposition method. The vertical orientation of DNTT is confirmed from the growth of the first layer using GIXD. The morphologies of the first-layer grains are universal in the growth rate range of 0.155-0.017 ML min(-1). In addition, the dependence of the nuclei density on the deposition flow rate indicates that two molecules (dimers) are required for nucleation. This result suggests that fewer molecules are sufficient for nucleation in the case of DNTT compared to pentacene thin film growth on SiO2.

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