Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors

YS Xu and T Liu and KL Liu and YH Zhao and L Liu and PH Li and AM Nie and LX Liu and J Yu and X Feng and FW Zhuge and HQ Li and XR Wang and TY Zhai, NATURE MATERIALS, 22 (2023).

DOI: 10.1038/s41563-023-01626-w

Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs). However, it remains challenging to integrate ultrathin and uniform high-& kappa; dielectrics on 2D semiconductors to fabricate FETs with large gate capacitance. We report a versatile two-step approach to integrating high-quality dielectric film with sub-1 nm equivalent oxide thickness (EOT) on 2D semiconductors. Inorganic molecular crystal Sb2O3 is homogeneously deposited on 2D semiconductors as a buffer layer, which forms a high- quality oxide-to-semiconductor interface and offers a highly hydrophilic surface, enabling the integration of high-& kappa; dielectrics via atomic layer deposition. Using this approach, we can fabricate monolayer molybdenum disulfide-based FETs with the thinnest EOT (0.67 nm). The transistors exhibit an on/off ratio of over 10(6) using an ultra-low operating voltage of 0.4 V, achieving unprecedently high gating efficiency. Our results may pave the way for the application of 2D materials in low-power ultrascaling electronics. A van der Waals buffer layer of Sb2O3 enables the integration of high-& kappa; dielectric layer with sub-1 nm equivalent oxide thickness on two-dimensional semiconductors, resulting in high performance of two-dimensional field- effect transistors.

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