Large-scale Molecular Dynamics Modeling of a-SiO2

NB Liao, PROGRESS IN MATERIALS AND PROCESSES, PTS 1-3, 602-604, 751-754 (2013).

DOI: 10.4028/www.scientific.net/AMR.602-604.751

Silicon dioxide plays an important role in integrated circuits and microelectronics. However, the experiments have limitations in micro/nano-scale characterization of fracture properties at high temperatures. In this paper, the structural and fracture properties of amorphous silicon dioxide (a-SiO2) were studied at temperatures up to 1500K. The simulation results consist with the experiments on pair distribution functions, structure factor and angular distributions.

Return to Publications page