Effect of the electric field on the mechanical properties of gallium nitride nanowires

J Zhang and CY Wang, EPL, 105, 28004 (2014).

DOI: 10.1209/0295-5075/105/28004

The effect of an electric field on the mechanical properties of gallium nitride (GaN) nanowires is studied using molecular-dynamics simulations. Results show that the electric-field effect is detectable for the fracture strengths and strong for the fracture strains. Owning to the elastoelectric effect, the monotonic changes with the electric field are observed for Young's modulus. Such elastoelectric effect also makes the piezoelectric coefficient decrease as the axial strain increases. The elastoelectric coefficient g333 approximate to -5.5N/(V center dot m) is measured for GaN nanowires. Copyright (c) EPLA, 2014

Return to Publications page