First-Principles Studies of Hydrogen Adsorption at Pd-SiO2 Interfaces

Y Irokawa and M Usami, SENSORS, 15, 14757-14765 (2015).

DOI: 10.3390/s150614757

The interaction of hydrogen with Pd-SiO2 interfaces has been investigated for the first time using first-principles calculations based on density functional theory. The hydrogen-induced polarization at the Pd-SiO2 interfaces was evaluated using Pd-SiO2 interface supercells. As a result, the potential change induced by interfacial hydrogen atoms was not observed even for hydrogen concentration of similar to 1.3 x 10(15) cm(-2) at the Pd-SiO2 interface. This result implies that hydrogen does not create an electric double layer at the Pd-SiO2 interface but change the property of the SiO2 region, resulting in the hydrogen sensitivity of the devices.

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