Time dependent modeling of single particle displacement damage in silicon devices

D Tang and I Martin-Bragado and CH He and H Zang and C Xiong and YH Li and DX Guo and P Zhang and JX Zhang, MICROELECTRONICS RELIABILITY, 60, 25-32 (2016).

DOI: 10.1016/j.microrel.2016.03.004

An approach combining molecular dynamics simulations with Kinetic Monte Carlo simulations is proposed to model the temporal evolution of single particle displacement damage in silicon. The three dimensional distributions of primary defects induced by Si recoils within 10 ps are obtained by molecular dynamics simulations and subsequently the long- term evolution (over 10(5) s) of multiple types of defects is simulated with Kinetic Monte Carlo technique fed by molecular simulation results. Based on classical Shockley-Read-Hall theory, the annealing factors of radiation-induced dark current related to the evolution of defects are predicted for photodiodes of 0.18 mu m CMOS image sensors under neutron irradiation. The calculation results are consistent with the experimental data. (C) 2016 Elsevier Ltd. All rights reserved.

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