Room Temperature SiC-SiO2 Wafer Bonding Enhanced by Using an Intermediate Si Nano Layer

F Mu and K Iguchi and H Nakazawa and Y Takahashi and R He and M Fujino and T Suga, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 6, P227-P230 (2017).

DOI: 10.1149/2.0081705jss

In this work, compared with the direct wafer bonding by surface activated bonding (SAB) at room temperature, SiC-SiO2 wafer bonding was effectively enhanced by using a Si nano layer deposited on SiO2 such as improvement of fracture surface energy and reduction of bonding void. A uniform seamless bonding in bonded region was confirmed by interface analysis. The strong bonding confirmed the strong bonding of SiC-Si in previous research and also demonstrated a strong adhesion of Si nano layer deposited on SiO2 substrate, which is different from direct wafer bonding of Si-SiO2 by SAB. The possible mechanism of strong adhesion was investigated by molecular dynamic simulation. (C) 2017 The Electrochemical Society. All rights reserved.

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