Quantum transport localization through graphene

S Srivastava and H Kino and S Nakaharai and E Verveniotis and Y Okawa and S Ogawa and C Joachim and M Aono, NANOTECHNOLOGY, 28, 035703 (2017).

DOI: 10.1088/1361-6528/28/3/035703

Localization of atomic defect-induced electronic transport through a single graphene layer is calculated using a full-valence electronic structure description as a function of the defect density and taking into account the atomic-scale deformations of the layer. The elementary electronic destructive interferences leading to Anderson localization are analyzed. The low-voltage current intensity decreases with increasing length and defect density, with a calculated localization length zeta = 3.5 nm for a defect density of 5%. The difference from the experimental defect density of 0.5% required for an oxide surface- supported graphene to obtain the same. is discussed, pointing out how interactions of the graphene supporting surface and surface chemical modifications also control electronic transport localization.

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